elektronische bauelemente S8050T npn silicon general purpose transistor 01-june-2005 rev. b page 1 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. 2.54 (1.27 typ.) 13 2 1: emitter 2: base 3: collector 1.25 4.55 0.2 0.1 0.1 0.2 0.2 0.2 0.2 3.5 4.5 14.3 0.46 0.43 0.07 0.08 to-92 rohs compliant product a suffix of ?-c? specifies halogen and lead free features z complimentary to s8550t z collector current: i c = 0.5 a absolute maximum ratings at ta = 25 c parameter symbol ratings unit collector to base voltage v cbo 40 v collector to emitter voltage v ceo 25 v emitter to base voltage v ebo 5 v collector currrent i c 500 ma total power dissipation p d 625 mw junction, storage temperature t j , t stg +150, -55 ~ +150 electrical characteristics (t amb = 25 c unless otherwise specified) parameter symbol min. typ. max. unit test conditions collector-base breakdown voltage v (br)cbo 40 - - v i c = 100 a, i e = 0 collector-emitter breakdown voltage v (br)ceo 25 - - v i c = 0.1 ma, i b = 0 emitter-base breakdown voltage v (br)ebo 5 - - v i e = 100 a, i c = 0 collector cut-off current i cbo - - 0.1 a v cb = 40 v, i e = 0 collector cut-off current i ceo - - 0.1 a v ce = 20 v, i b = 0 emitter cut-off current i ebo - - 0.1 a v eb = 5 v, i c = 0 h fe(1) 85 - 400 v ce = 1 v, i c = 50 ma dc current gain h fe(2) 50 - - v ce = 1 v, i c = 500 ma collector-emitter saturation voltage v ce(sat) - - 0.6 v i c = 500 ma, i b = 50 ma base-emitter saturation voltage v be(sat) - - 1.2 v i c = 500 ma, i b = 50 ma transition frequency f t 150 - - mhz v ce = 6 v, i c = 20 ma, f = 30 mhz classification of h fe rank b c d d3 range 85 - 160 120 - 200 160 - 300 300 - 400
elektronische bauelemente S8050T npn silicon general purpose transistor 01-june-2005 rev. b page 2 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves S8050T
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